Abstract
The effects of ex situ high temperature annealing (T≳500 °C) on the hole and hydrogen concentration of the base and on the dc device characteristics of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition have been studied. Using rapid thermal annealing, hydrogen can be completely annealed out of the base, activating the carbon acceptors. Due to the low diffusivity of carbon, the high temperatures necessary to remove most of the hydrogen do not degrade the device characteristics. Using this simple technique to eliminate hydrogen from the base prior to device fabrication should improve the reliability of GaAs-based transistors with a carbon-doped base. Results also indicate that unlike carbon-doped In0.53Ga0.47As, hydrogen does not significantly affect the minority carrier characteristics of carbon-doped GaAs.
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