Abstract
Removal of boron from molten silicon was investigated using Ar plasma mixed with water vapor in view of developing a new process for solar-grade silicon (SOG-Si). The raw silicon was induction-melted and blown with a plasma flame of Ar gas with water vapor. It was concluded that the concentration of boron in silicon was decreased from 20 ppmw down to 0.1 ppmw or less by the plasma treatment for 300 minutes, and the rate of removing boron is proportional to both of the concentration of H2O in Ar plasma and the reaction area on the molten surface formed by blowing of the plasma. Presumably, the boron atoms were removed as volatile boron oxides. The kinetic analysis revealed the first order character of the reaction.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
