Removal of As(V) by Cu(II)-, Ni(II)-, or Co(II)-doped goethite samples

Abstract

The present study reports removal of As(V) by adsorption onto laboratory-prepared pure and Cu(II)-, Ni(II)-, and Co(II)-doped goethite samples. The X-ray diffraction patterns showed only goethite as the crystalline phase. Doping of ions in the goethite matrix resulted in shift of d-values. Various parameters chosen for adsorption were nature of adsorbent, percentage of doped cations in goethite matrix, contact time, solution pH, and percentage of adsorbate. It was observed that the pHpzc of the goethite surface depended on the nature and concentration of metal ions. The surface area as well as the loading capacity increased with the increase of dopant percentage in goethite matrix. A maximum loading capacity of 19.55 mg/g was observed for 2.7% Cu(II)-doped goethite. The adsorption kinetics for Ni(II), Co(II) and for undoped goethite attained a quasi-equilibrium state after 30 min with almost negligible adsorption beyond this time. In case of Cu(II)-doped goethite samples, the quasi-equilibrium state for As(V) adsorption was observed after 60 min. At each studied pH condition, it was observed that the percentage of adsorption of As(V) decreased in the order Cu(II)-doped goethite⩾Ni(II)-doped goethite>Co(II)-doped goethite>pure goethite. The adsorption followed: Langmuir isotherm, indicating monolayer formation.