Abstract
Remote thermal sensing has emerged as a temperature detection technique for tasks in which standard contact thermometers cannot be used due to environment or dimension limitations. One of such challenging tasks is the measurement of temperature in microelectronics. Here, optical thermometry using co-doped and mixed dual-center Gd2O3:Tb3+/Eu3+ samples were realized. Ratiometric approach based on monitoring emission intensities of Tb3+ (5D4–7F5) and Eu3+ (5D0–7F2) transition provided sensing in the range of 30 °C–80 °C. Dispersion system type only slightly affected relative sensitivity, accuracy and precision. The applicability of phosphors synthesized to be utilized as remote optical thermometers for microelectronics has been proved with an example on a surface mount resistor and microcontroller.
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