Abstract
Abstract There are several advanced processes which are being actively studied as candidates for sub-0.25 μm technology. This paper studies the effects on NMOS hot carrier reliability from remote plasma nitrided oxide (RPNO), deuterium anneal and pocket implant. It is found that RPNO will not affect the SiO 2 /Si interface. The hot carrier reliability is better for the same device channel current. This is due to making the effective oxide thickness thinner and achieving the same drive current with longer channel length. The deuterium anneal can improve the hot carrier reliability, even with nitride sidewall, if proper annealing is done. While the pocket implant can reduce short channel effects, the hot carrier lifetime is degraded unless optimization is done.
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