Abstract
The GaN growth has been investigated in a remote plasma MOCVD apparatus. Optical emission spectroscopy has been used to optimize the N-atoms production and to monitor the plasma/gas phase chemistry surrounding the substrate during GaN growth. Laser reflectance interferometry is used to measure in situ the growth rate and spectroscopic ellipsometry monitors the growing surface modifications. This multidiagnostic approach allows the correlation of the plasma/gas phase chemistry with the kinetics of the growth process.
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