Abstract
The principles and advantages of the remote plasma-enhanced chemical vapour deposition (RPECVD) technique are discussed. Separation of plasma and substrate leads to reduce bombardment of the substrate and growing film with energetic particles. Separation of plasma and reaction zone results in an improved control of reaction mechanisms, thereby yielding films of higher purity. By using metal organic source compounds tailored for a specific process the degree of control can be enhanced. Finally, we discuss the suitability of RPECVD (using metal organic source compounds) for industrial applications and stress the need for further research in order to take full advantage of the possibilities of RPECVD.
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