Remote doping of a pentacene transistor: Control of charge transfer by molecular-level engineering

Abstract

We demonstrate that holes from a p-doped N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (α-NPD) layer transfer to an adjacent pentacene film. The spatial separation of carriers from dopants, or remote doping, is demonstrated with a combination of photoemission spectroscopy and current-voltage measurements for a p-doped α-NPD/pentacene heterojunction. Increased conductivity of the pentacene film is observed in both nongated temperature-dependent conductivity and gated thin-film transistor measurements.