Abstract
Oxide thin-film transistors (TFTs), including indium–gallium–zinc oxide (IGZO) TFTs, have been widely investigated because of their excellent properties, such as compatibility with flexible substrates, high carrier mobility, and easy-to-fabricate TFT processes. However, to increase the use of oxide semiconductors in electronic products, an effective doping method that can control the electrical characteristics of oxide TFTs is required. Here, we comprehensively investigate the effect of silane-based self-assembled monolayer (SAM) doping on IGZO TFTs. Instead of a complex doping process, the electrical performance can be enhanced by anchoring silane-based SAMs on the IGZO surface. Furthermore, differences in the doping effect based on the structure of SAMs were analyzed; the analysis offers a systematic guideline for effective electrical characteristic control in IGZO TFTs.
Highlights
Oxide semiconductors have been promising for various applications, e.g., thin-film transistors (TFTs) for flexible [1,2,3] and transparent [2] display products, photodetectors [3,4], and embedded sensors [5]
Differences in the doping effect based on the structure of self-assembled monolayer (SAM) were analyzed; the analysis offers a systematic guideline for effective electrical characteristic control in indium gallium zinc oxide (IGZO) TFTs
Compared with amorphous silicon (a-Si), oxide semiconductors enable easy-to-fabricate processes and incur lower fabrication costs, accompanied by a reduced thermal budget required for three-dimensional integrations
Summary
Oxide semiconductors have been promising for various applications, e.g., thin-film transistors (TFTs) for flexible [1,2,3] and transparent [2] display products, photodetectors [3,4], and embedded sensors [5]. 2 ofre mote doping layers [25] They have molecular assemblies that form a chemical bond on the oxide surface, enabling a highly uniform and oriented domain morphology. In spite of the trial of SAM-based doping on oxide semiconductors, accurate control of doping the oxide surface, enabling a highly uniform and oriented domain morphology. We fabricated octyltrichlorosilane (OTS) and octadecyltrichlorosilane (ODTS)molecular chain length control and annealing temperature conditions (TA = 120, 150, and treatment-doped IGZO TFTs. With an increase in TA, we investigated the electrical char200 ◦ C). We fabricated octyltrichlorosilane (OTS) and octadecyltrichlorosilane (ODTS)acteristics of the TFTs, including the carrier mobility, VTH, subthreshold swing (SS), and treatment-doped IGZO TFTs. With an increase in TA , we investigated the electrical charon–off current ratio. OTDS doping effects by means of surface energy extraction and contact resistance analysis
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