Abstract
The optical properties of InGaN-based green laser structures fabricated on (0001) GaN substrates are investigated using photoluminescence (PL) spectroscopy. Both macroscopic and microscopic measurements demonstrate that the potential fluctuations are drastically suppressed in state-of-the-art (0001) green InGaN laser structures. Time-resolved PL suggests that InGaN quantum wells (QWs) become thinner than conventional QWs, which is compensated for by higher In compositions. Such QWs increase the radiative recombination probability due to a greater overlap between the electron and hole wavefunctions. The suppressed luminescence inhomogeneity and increased radiative recombination probability may be responsible for the recent remarkable reduction in the lasing threshold.
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