Abstract
High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.
Highlights
In the 4.5-nm-thick SnO2 thin-film transistor (TFT), the high mobility is due to the high VG-induced carrier density[31] of ~1013 cm−2 to screen out charged defects
To thoroughly understand the cause of the high mobility in SnO2 TFT, first principle quantum-mechanical calculations were used to investigate the electronic structures of SnO2 and ZnO; ZnO has been extensively studied using the localized density functional theory (DFT) to reveal the mechanism that leads to its high mobility
Zn 4s was the major component near conduction band minimum (CBM) while O 2p orbitals had little contribution at levels lower than 5 eV
Summary
High mobility SnO2 TFT is achievable on the amorphous substrate and free from lattice-mismatch defects. In the 4.5-nm-thick SnO2 TFT, the high mobility is due to the high VG-induced carrier density[31] of ~1013 cm−2 to screen out charged defects. The high mobility SnO2 TFT was further investigated using material analysis.
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