Abstract
High mobility thin-film transistor (TFT) is crucial for future high resolution and fast response flexible display. Remarkably high performance TFT, made at room temperature on flexible substrate, is achieved with record high field-effect mobility (μFE) of 345 cm2/Vs, small sub-threshold slope (SS) of 103 mV/dec, high on-current/off-current (ION/IOFF) of 7 × 106, and a low drain-voltage (VD) of 2 V for low power operation. The achieved mobility is the best reported data among flexible electronic devices, which is reached by novel HfLaO passivation material on nano-crystalline zinc-oxide (ZnO) TFT to improve both ION and IOFF. From X-ray photoelectron spectroscopy (XPS) analysis, the non-passivated device has high OH-bonding intensity in nano-crystalline ZnO, which damage the crystallinity, create charged scattering centers, and form potential barriers to degrade mobility.
Highlights
The fabricated devices on flexible polyethylene naphthalate (PEN) substrate is shown in the photo of Fig. 1
To improve the interface[30], extra SiO2 dielectric was inserted between ZnO and TiO2
The mobility of HfLaO-passivated ZnO thin-film transistor (TFT) is higher than the IGZO and ZnON TFTs on rigid substrate[22, 23] that is the record highest value for TFTs on flexible substrate[1,2,3,4,5,6,7]
Summary
High mobility thin-film transistor (TFT) is crucial for future high resolution and fast response flexible display. The achieved mobility is the best reported data among flexible electronic devices, which is reached by novel HfLaO passivation material on nano-crystalline zinc-oxide (ZnO) TFT to improve both ION and IOFF. High μFE of 345 cm2/Vs was achieved in nano-crystalline ZnO TFT on flexible substrate with a high dielectric constant (high-κ) gate oxide[25,26,27,28,29] This μFE value is even higher than IGZO and ZnON TFTs made on rigid glass[22, 23] that is the record highest value for devices on flexible substrate[1,2,3,4,5,6,7]. High ION/IOFF of 7 × 106 and a low VD of 2 V were measured to reach low switching power ofCGVD2f 2, where CG and f are the gate capacitance and operation frequency, respectively This remarkably high mobility TFT is achieved using novel HfLaO passivation on nano-crystalline ZnO. The remarkably high μFE HfLaO/ZnO TFT suggests the excellent opportunity for both flexible and rigid display applications
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