Abstract

Remanence properties and magnetization reversal mechanism of Fenanowire arrays with diameters 16 nm and 130 nm are studied. Isothermalremanent magnetization curves show that the contribution ofirreversible magnetization decreases when the diameter changes from16 nm to 130 nm. The remanence coercivities of these nanowires obtained indc-demagnetization curve are about 2400 Oe and 800 Oe, respectively.The magnetization reversal mechanism is different in these two samples.For the nanowire array with diameter 16 nm, both the nucleation and thepinning have effects on magnetization reversal mechanism, and thepinning field (about 2500 Oe) is larger than the nucleation field(about 2200 Oe). However, for the nanowire array with diameter 130 nm,the magnetization reversal mechanism is dominated by the pinning effectof domain walls.

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