Abstract
We investigate switching properties of patterned sub-micron magnetic tunnel junctions (MTJs) incorporating NiFe and CoFe free layers of different thickness through magnetotransport measurements. The remanent state measurements can separate respective effect of 2π-domain wall, vortex, and multi-domain formation on non-uniform R-H curve of MTJ free layer. The reduction of CoFe insertion layer thickness leads to the suppression of vortex magnetization during switching. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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