Abstract
Growths of Ge on Au-adsorbed Si(001) √26 × 1 and c(18 × 2) surfaces were studied by REM-RHEED. By Ge deposition these Au-adsorbed structures transformed to the √26 × 1 structure below 600°C and to a 4 × n structure above 600°C. Changes of the domain structure with the changes of the surface structure were observed. In spite of the changes of the surface structure traces of the domain structures of the starting surface remained. Domain boundaries were preferential nucleation sites of 3D Ge islands. Surface diffusion of Ge atoms and their capturing rate at step edges of the 2D islands were anisotropic on the √26 × 1 reconstruction.
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