Abstract
Resistance random access memory (ReRAM) has attracted great attention due to their drastically reduced power consumption, fast switching speed, and nondestructive readouts [1]. However, non-uniformity and reliability issue are still considered as barriers for future high density memory applications. To solve these issues, our group proposed single crystal Schottky diode device [1] in 2005. Recently, new structures were proposed to improve the reliable switching. In case of binary oxide memory, bi layers structures (Ta 2 O 5-δ /TaO 2-β , TiO x /HfO x ) show excellent switching properties, which can be explained by redox mechanism at active layer. [2, 3] In this paper, to improve the switching and uniformity properties, we adopted the bi-layers of ZrO x /HfO x structure. Pt/ZrO x /HfO x bi-layers structure was fabricated on the TiN/Ti/SiO 2 /Si wafer. The HfO x layer was deposited by atomic layer deposition (ALD) system and subsequently, Pt/Zr stack (50 um × 50 um) was patterned by lithography. The formation of bi-layers was confirmed by XPS data. The thickness of ZrO x and HfO x layer were 5 nm and 3 nm, respectively.
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