Abstract
Nonlinear charge carrier transport has been investigated for the metal-intrinsic semiconductor-metal (M-i-M) and heterojunction of two intrinsic semiconductor (i-i) structures. It is shown that if the film thickness is of the order of the Debye screening radius, the current—voltage characteristics of these structures become comparable to those observed for the usual junctions at the base of doped semiconductors. The possibility of solid-state electronic devices at the base of M-i-M and i-i thin film structures is demonstrated. For intrinsic semiconductors, using semiconductors of the In 2Te 3 type, which cannot be effectively doped, but possess extremely high radiation stability, permits one to create a family of electronic devices for application under conditions of very high levels of ionizing irradiation.
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