Abstract
Graphene exhibits exciting properties which make it an appealing candidate for use in electronic devices. Reliable processes for device fabrication are crucial prerequisites for this. We developed a large area of CVD synthesis and transfer of graphene films. With patterning of these graphene layers using standard photoresist masks, we are able to produce arrays of gated graphene devices with four point contacts. The etching and lift off process poses problems because of delamination and contamination due to polymer residues when using standard resists. We introduce a metal etch mask which minimises these problems. The high quality of graphene is shown by Raman and XPS spectroscopy as well as electrical measurements. The process is of high value for applications, as it improves the processability of graphene using high-throughput lithography and etching techniques.
Highlights
Graphene has many potential applications including micro-nanoelectronics, sensors and transparent electronics
We show reliable processing of graphene on insulating substrates to produce high quality graphene field effect transistor (FET) devices
The process flow further avoids the exposure of the active graphene layers with polymers during plasma processing, reducing the possibility of polymer residues
Summary
Graphene has many potential applications including micro-nanoelectronics, sensors and transparent electronics. The processing of graphene requires a transfer or growth on an insulating substrate, its patterning and subsequent contacting. In order to fabricate graphene-based devices, lithographic patterning is used to make etch masks, using standard positive or negative resists. This is followed by oxygenbased plasma to remove graphene, and subsequent removal of the residual resist. Each of these processing steps may affect the quality of the graphene as defects can be created, and contaminants can be introduced. Delamination of graphene occurred when removing the mask after etch treatment This may be attributed to the low adhesion of graphene to the substrate in absence of chemical bonds. The process flow further avoids the exposure of the active graphene layers with polymers during plasma processing, reducing the possibility of polymer residues
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