Abstract
AbstractThis investigation presents nitride‐based near ultraviolet (n‐UV) light emitting diodes (LEDs) with a meshed p‐GaN layer. With 20 mA injection current, it was found that forward voltages were 3.29, 3.31 and 3.39 V while output powers were 7.5, 9.0 and 10.6 mW for the planar indium‐tinoxide (ITO) LED, mesh ITO LED and meshed p‐GaN LED, respectively. The larger LED output power is attributed to increased light extraction efficiency. It was also found that we could use such a meshed p‐GaN layer to achieve reliable nitride‐based n‐UV LEDs. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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