Abstract
ABSTRACTA simple process for making reliable InP/InGaAs multiple quantum well (MQW) modulator waveguide devices optimized with respect to electro-refractive modulation has been developed. The main concern of this study is the surface properties of the InP surface prior to metallization and etching. A new protective surface passivation technique combining vacuum procurement (∼5xl0-7 Torr) to reduce the water content in the native oxides with an in situ rf-sputter deposition of reactive SiOx onto the surface of InP is reported. This procedure provides smooth surfaces and good optical properties of GaInAs/InP based strip-loaded waveguides.
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