Reliable, low-power super-lattice phase-change memory without melting and write-pulse down slope

Abstract

A reliable super-lattice phase change memory (SL-PCM) is investigated. Since the conductivity of SLPCM is changed by Ge flip-flop, <; 300 μA write-current is achieved. Additionally, pulse slope is found to be unnecessary, in fact, too long falling edge has negative effects for SET, since SL-PCM does not melt. As a result, due to small write-current, SL-PCM solves the reliability problems about thermal disturb and electro-migration and provides a potential for next-generation non-volatile memories.