Abstract
AbstractLaser structures with InGaAsP quantum well were grown on GaAs substrates in a solid source MBE system. Threshold current density Jth as low as 290A/cm2 and slope efficiency as high as 0.68W/A per facet were obtained for uncoated laser chips at 25°C. After 857 hours burn-in at 47A (corresponding to around 47W) at room temperature, power degradation rate was measured to be less than 3×10−6/h.
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