Reliable Ge2Sb2Te5‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy

Abstract

AbstractConductive bridge random access memory (CBRAM) is a possible replacement for static field‐programmable gate arrays (FPGAs) based on random‐access memory. Ge2Sb2Te5 (GST) is used in CBRAMs as a solid electrolyte due to its high diffusion properties of active ions and scalability to obtain high‐density memory devices. Here, the trade‐off between high memory window and uniformity of CBRAM based on GST is solved by introducing N atoms into the SE. Nitrogen‐incorporated GST film (N‐GST) is proposed as a replacement for the current GST‐based CBRAMs with improved performance and better opportunities for conventional FPGA technologies. A bidirectional polarity‐dependent characteristic with high ION/IOFF ratio and satisfactory operation voltage is achieved by using N‐GST thin film in a programmable metallization cell (PMC). Integration of N atoms in the GST‐based PMC with a simple structure of Ag/ N‐GST /Pt increases the resistance ratio more than 100 times compared to an undoped one. Consistent data retention is attained in both resistance states for ≥3.5 × 104 s at temperature up to 85 °C.