Reliability tests on millimetre wave 100 nm gate length process for safe operating area evaluation methodology

Abstract

This paper presents a reliability evaluation of a low noise amplifier (Thales Alenia Space design) based on PHEMT GaAs 100 nm technology from a European foundry. The methodology relies on two kinds of test: an RF step stress (cumulative gradual increase stress test) to evaluate a safe operating area then an RF life test (long term stress test) to validate the safe operating area. Degradations are evaluated by typical static and dynamic measurements. In this paper, the methodology is enriched by an additional low field static measurement analysis which allows a better understanding of degradation mechanisms.