Abstract
In this paper, we describe a smart power device degradation behavior under thermal cycling stress. An innovative test structure was developed, which faithfully reflects a stress state caused by the smart power device during operation. From our experiment, the device degraded after millions of fast thermal cycling pulses. We discovered that via destruction was the cause of the device degradation. For the duration of thermal cycling stress, the via resistance increased gradually, and finally increased rapidly at the point of millions of cycles. A failure via was observed, which was broken into two parts. Therefore, the via disconnection was considered to be due to thermo-mechanical stress or electro-migration. Some experiments were conducted, and we demonstrated that the via destruction dominated to the thermo-mechanical stress introduced by the thermal cycling stress.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.