Abstract
A two-phase study was performed to investigate basic failure mechanisms, alternate fabrication methods, and operational life times of low-noise microwave MESFETs fabricated on GaAs channel layers grown by liquid-phase epitaxy. The basic sub-elements of the FET were investigated, and a Cr link for connecting the Al gate to Au bond pad was developed and incorporated into an improved FET. The first high-temperature (230 to 270°C) accelerated life tests of GaAs FETs under operational low-noise bias conditions (VD = 5 V, ID = 10 mA) were performed, and decreasing saturated drain current was found to be the primary failure mode below 270°C. An activation energy Ea = 1.5 eV was determined for this mode, and an MTTF of 2 × 108 hr at 100°C is projected. At 270°C the primary failure mode is catastrophic gate failure caused by Au-Al intermetallic formations. Comparisons of parameter aging data support a relationship between dc and rf failure criteria, but considerable scatter appears to weaken its usefulness for individual devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
