Abstract
In the present era of big data and 5G wireless, both microelectronic and photonic components are indispensable building blocks. For microelectronics, device miniaturization has been following Moore’s law to attain higher speed and greater functionality. For photonics, similar device scaling is also evolving in both lasers and photodiodes to transmit high data rates of 25 Gb/s and beyond. However, such device miniaturization may impose challenges such as reliability and fabrication that require careful scientific and engineering studies. In particular, the reliability understanding of photonic device scaling is fairly rudimentary with only scattered reports. In this paper, we study the device and reliability scaling of nanoscale avalanche photodiodes (APDs). The device miniaturization of APDs mainly involves thickness reduction in the charge control and multiplication layers. The layer reduction however causes an increase in breakdown field that may adversely affect reliability in several aspects such as electrical/optical overload and electrostatic discharge (ESD). We present a new reliability degradation model of APDs based on the breakdown field and correlate it with the experimental data. Empirical reliability equations are instituted to establish quantitative formulation. We discuss the overload and ESD performances as a function of breakdown field for both planar-type and mesa-type APD structures.
Highlights
Device scaling is the key driver for the sustained success of lower cost and increased functionality in semiconductor industry (Moore, 1965; Semiconductor Industry Association, 2019; Arden et al, 2010)
We report the reliability data of avalanche photodiodes (APDs) as a function of breakdown electric field resulting from the miniaturization in the apr.ccsenet.org
The field is increasing in the charge layer and reaches the maximum in the multiplication layer that is responsible for avalanche breakdown operation (Campbell, 2016)
Summary
Device scaling is the key driver for the sustained success of lower cost and increased functionality in semiconductor industry (Moore, 1965; Semiconductor Industry Association, 2019; Arden et al, 2010). Owing to the large market size and broad applications, the IC semiconductor companies have been increasing their R&D spending on research and reliability studies, up to $58.9 billion in 2017 (IC Insights, 2017). The typical miniaturization involves reduction in critical layer thickness. Since the device roadmap of photonics is generally not as specific as that of the ICs, the reliability studies are expected to be relatively more sporadic (Huang, 2015; Ishimura et al, 2007; Huang et al, 2018; Kim et al, 2001; Takeshita et al, 2006; Watanabe et al, 1996; Huang et al, 2017; Smith et al, 2009). The miniaturization of APD typically involves the thickness reduction of multiplication layer to attain higher device speed. The layer thickness reduction would lead to higher electric field that may impose adverse effects on reliability. We report the reliability data of APDs as a function of breakdown electric field resulting from the miniaturization in the apr.ccsenet.org. We discuss the reliability aspects of optical and electrical overload as well as electrostatic discharge (ESD) from device scaling
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