Reliability Research and Practice of Kilowatt P-band GaN Power Transistor

Abstract

Staring from the practical applications, this paper studies the methods to improve P-band kilowatt-level GaN power transistor reliability. Through application circuit design, we discussed the use of grid circuit design, anti-self-excitation circuit design, and anti-voltage design to improve the reliability of the GaN power transistor profoundly, and through the integrated heat pipe type equilibrium temperature design and printed board heat dissipation design, we improved the heat dissipation capacity significantly, and effectively improved the reliability of GaN power transistor applications. The reliability growth test reduced the failure rate of the GaN power transistor to less than 0.5%, proved that the measures are reasonable and adequate, and it will be a good reference for GaN power transistor reliability research.