Reliability performance of 25 Gbit s−1 850 nm vertical-cavity surface-emitting lasers

Abstract

Multimode 850 nm vertical cavity surface-emitting lasers (VCSELs) suitable for high bit rate operation are studied. VCSELs with oxide aperture diameters of 5–7 µm show a high −3 dB modulation bandwidth (∼20 GHz) and D-factor (∼ 8 GHz mA−1/2). To allow low capacitance a multiple layer oxide-confined aperture design was applied. Eye diagrams are clearly open up to 35 Gbit s−1 at the temperature of 25 °C. Using 35 µm diameter PIN photodiodes and 6 µm oxide aperture diameter VCSELs error-free 25 Gbit s−1 (defined as a bit error ration of ≤1 × 10−12) optical fiber communication links were tested over 100 m of standard OM3 multimode optical fibers at 25 °C and 85 °C. The received optical power for error-free operation was below −4 dBm at both temperatures. A VCSEL reliability study at 95 °C was performed at the high current densities (∼18 kA cm−2) needed for error-free 25 Gbit s−1 operation at elevated temperatures. After 6000 h a slight increase (less than 5%) of the output optical power at a constant current was observed and most likely due to an ohmic contact burn in effect within the first 2000 h of the study. The results clearly indicate that 25 Gbit s−1 850 nm oxide-confined VCSELs with a complex AlGaO multilayer aperture design and with step-graded Al-compositions have the potential for reliable operation.