Reliability of the Heitler-London approach for the exchange coupling between electrons in semiconductor nanostructures

Abstract

We calculate the exchange coupling $J$ between electrons in a double-well potential in a two-dimensional semiconductor environment within the Heitler-London (HL) approach. Two functional forms are considered for the single-well potential. We show that by choosing an appropriate and relatively simple single-electron variational wave function it is possible, within the HL approach, to significantly improve the estimates for $J$. In all cases the present scheme overcomes the artifacts and limitations at short interdot distances, previously attributed to the HL method, where unphysical triplet ground states have been found, and leads to an overall agreement with analytic interpolated expressions for $J$ obtained for a donor-type model potential.