Reliability of Sub-20 nm Black Phosphorus Trench (BP-T) MOSFET in High-Temperature Harsh Environment

Abstract

In this work, the high-temperature reliability of the Black Phosphorus Trench (BP-T) MOSFET device has been analyzed. When the temperature is very high (500 K), the proposed device (BP-T-MOSFET) shows very high reliability with less effects in the device performance. The device is also calibrated with the experimental data. All the simulation has been performed using ATLAS-3D device simulator. BP-T-MOSFET shows high-temperature reliability in terms of reduced sub-threshold current, hot-electron injection gate current, and impact ionization substrate current. Further, higher switching ratio (Ion/Ioff), electron mobility, and electron velocity have also been observed owing to the electrical properties of black phosphorus used in the trench gate which shows the potential in a high-temperature environment. Owing to trench structure and electrical properties of black phosphorus, BP-T-MOSFET has significant device efficiency and low leakage currents at high temperatures which prove as highly shrieked MOS device applications in harsh temperature environment.