Abstract
The effects of alpha particles’ irradiation on the performance of simplified PERC silicon solar cells are studied through technology computer aided design (TCAD) simulations. The methodology adopted in this work incorporates the non-ionizing energy loss (NIEL) phenomenon to understand the radiation effects, which does not depend on extensive irradiation experimentations. Simulation results show that alpha particles in the range of ∼10 MeV and with fluence >1014 cm−2 lead to maximum performance degradation of the solar cell. Moreover, it is found that upon irradiating the solar cell with 1 MeV alpha particles, the output power reduces proportionally with increasing fluence due to the reduction of minority carrier lifetime in the base. On the other hand, the fill factor (FF) degrades by only <10% up to a fluence of ∼1013 cm−2, after which it decreases sharply. This trend reveals that the FF deteriorates significantly only when the irradiation process creates a Frenkel pair density that approaches the majority carrier density in the base. The methodology presented in this work opens new research avenues for potentially optimizing the solar cell design not only for better efficiency but also for improved reliability in radiation rich environments.
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