Abstract
This study focused on the feasibility of using Ni flip chip bumps with a Sn–2.5Ag (wt.%) solder encapsulation. The interfacial reaction and die shear property of the Ni flip chip bump with a Sn–Ag solder cap bonded on the electroplated Cu/Sn–Ag substrate were investigated with increasing bonding time. After bonding for 1 s (Cu x Ni 1− x ) 6Sn 5 and Cu 6Sn 5 intermetallic compound (IMC) layers were formed at the upper and lower interfaces, respectively, with the former IMC being the predominant phase during bonding. The transformation of the solder cap into the (Cu x Ni 1− x ) 6Sn 5 IMC depleted the solder after bonding for 30 s, and then the Ni concentration in the IMC gradually decreased with increasing bonding time. The shear property peaked after 30 s, and then decreased with increasing bonding time. The fractures occurred at the solder/Cu 6Sn 5 interface and inside the (Cu x Ni 1− x ) 6Sn 5 IMC after bonding for 1 s and 30 s, respectively, after which the fracture location shifted toward the (Ni x Cu 1− x ) 3Sn 4/(Cu x Ni 1− x ) 6Sn 5 interface with increasing bonding time.
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