Abstract
Reliability of NAND flash memory is more interesting than that of other semiconductor devices. Program and erase of NAND flash perform by electron injection and emission to/from floating gate (FG). There are several methods of electron injection and emission. For electron injection, there are two methods, namely channel hot electron (CHE) injection and Fowler-Nordheim tunneling (FN-t) injection. Data retention is degraded by electron and hole traps in tunnel oxide. Detrapping of trapped charges in tunnel oxide is a major root cause of V t shift during the data retention test. Read disturb failure is mainly caused in the erase state after program/erase cycling stress. The stress-induced leakage current (SILC), which is generated by program/erase cycling stress, is major root cause for the read-disturb phenomena. The mechanism of erratic over program is considered to be an excess electron injection at hole trap sites in tunnel oxide.
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