Abstract
InGaAs planar-structure PIN photodiodes fabricated from MOVPE material have been demonstrated to have outstanding reliability. The predicted random failure rate at 20 degrees C is less than 0.3 FITs, and the mean time to failure is estimated to be 10/sup 11/ hours at 20 degrees C. By contrast, the reliability of mesa-structure photodiodes is unacceptable because of an instability of the dark current. A similar kind of instability has been observed in commercially available mesa photodiodes. Extensive life testing of planar-structure and mesa-structure PINs made by several manufacturers shows that the reliability of mesa-structure PINs is inferior in all cases.< >
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