Abstract
AlN, SiAlN and SiN films have been studied for use as the Kerr rotation enhancing and protective films of the magneto-optical (MO) storage media. Electrochemical tests (cyclic voltammetry) and high temperature, high humidity chamber tests have been carried out in order to evaluate the reliability of the dielectric layers. An AlN dielectric layer shows improved reliability due in part to a greater resistance to microcracking resulting from delicate internal stresses in the films. A SiN layer has a significant advantage for use as a protective film, reducing moisture penetration. An optimum configuration of dielectric layers on a quadri-layered MO medium is proposed for improved reliability performance.
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