Abstract
The reliability of high-performance AlInAs/GaInAs heterojunction bipolar transistors (HBTs) grown by molecular beam epitaxy (MBE) is discussed. Devices with a base Be doping level of 5*10/sup 19/ cm/sup -3/ and a base thickness of approximately 50 nm displayed no sign of Be diffusion under applied bias. Excellent stability in DC current gain, device turn-on voltage, and base-emitter junction characteristics was observed. Accelerated life-test experiments were performed under an applied constant collector current density of 7*10/sup 4/ A/cm/sup 2/ at ambient temperatures of 193, 208, and 328 degrees C. Junction temperature and device thermal resistance were determined experimentally. Degradation of the base-collector junction was used as failure criterion to project a mean time to failure in excess of 10/sup 7/ h at 125 degrees C junction temperature with an associated activation energy of 1.92 eV.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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