Abstract
Hot carrier effect on active RF filter performance is studied systematically for 0.16 mum CMOS technology. Active inductor based RF filter can be used for RF and IF filters in wireless communications. Hot carrier interface state generation (HCI) and time-dependent dielectric breakdown (TDDB) effects degrade the device parameters, and in turn degrade the performance of the active inductors and filters. A band-pass filter centered at 1.8 GHz is designed and the HCI and TDDB effects are investigated
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