Abstract
Silicon carbide (SiC) devices have its unique advantages of high operating temperature, high voltage capability with low switching losses when compared to its silicon counterparts. This paper presents a systematic method for long-term reliability analysis for SiC devices. The reliability block diagrams (RBDs) have been established for a SiC power module with standard wire-bonded package. The reliability function and mean time to failure (MTTF) for this module has been estimated by using the lifetime models for single bond wire and SiC chip. The analysis shows that the bond wires are the weakest line of the whole device's reliability. Therefore, it is obvious that utilizing to the full potential of SiC devices is critical for increasing the reliability of package. Design for novel package structure (e.g. without bond wires) may be a possible solution.
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