Abstract
In the present paper, different analytical lifetime models have been assessed on porous low-k dielectrics (in CMOS 28 nm structures) to predict lifetimes. Quantitative comparisons are made thanks to over-one-year-long low-field reliability tests. The lucky electron model (fitted at high fields) shows its higher ability to predict the dielectric mean-time-to-failure (MTTF) at low-field. Then the fitting parameters of this model (α = 32 et γ = 14.5) have been determined independently from this MTTF fitting procedure: these new values (α = 31 et γ = 14), extracted from the analysis of both Poole–Frenkel conduction and initial leakage current, are in very good agreement with the MTTF-fitted ones. The consequences of this model are discussed.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
