Abstract
High-density and reliable electronic synapses with bipolar resistive switching behavior are the building blocks for the hardware implementation of artificial neural network. However, the power consumption and reliability of resistance states are major challenges for commercialization of electronic synapses. Here, a fully complementary metal-oxide semiconductor (CMOS)-compatible resistance switching device and its crossbar arrays with the introduction of a novel two-dimensional transition metal carbides MXene (Ti 3 C 2 ) has been investigated. Comparing with TiN/Cu/SiO 2 /TiN device, low operation voltage has been achieved as well as reliable resistance states in MXene/SiO 2 structure. In addition, long retention exceeding 3.5 × 103 seconds has been measured. Furthermore, the fitting results demonstrate that the conduction mechanisms of HRS and LRS show space charge limited conduction (SCLC) and ohmic characteristics, respectively. The controllability of conductive filament growth is proposed to be responsible for the performance improvement of reliability.
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