Abstract
This work covered the application of thermally reduced graphene oxide (rGO) as a hole-transport layer (HTL) to enhance stability of normal P3HT:PCBM-based bulk-heterojunction solar device. This device showed approximately the same performance of device using PEDOT:PSS as HTL (3.14%). After 3 days, exposure of an unsealed device in 1 sun illumination, rGO device resulted in 67% degradation of performance, whereas samples fabricated with PEDOT:PSS or without HTL degraded to more than 88% in efficiency. By simulation into an equivalent circuit, impedance analysis demonstrated that this degradation was strongly depended on the buffer materials. The use of the thermally rGO as buffer material could reduce the change of resistance in both HTL and bulk layer as well as avoid the accumulation of space charges in the active film.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
