Abstract
We report the fabrication of highly reliable amorphous InGaZnO (a-IGZO) passivated by a novel photosensitive polysilsesquioxane-based passivation layer using a simple solution process. Results show that the photosensitive passivation material is effective in improving the reliability of a-IGZO. a-IGZO thin film transistors (TFT) passivated by this photosensitive material exhibited a small threshold voltage (V th ) shift of ~ 0.4 V during positive bias stress (PBS), ~ -0.15 V during negative bias stress (NBS) and -2.3 V during negative bias illumination stress (NBIS). These results demonstrate the large potential of easy to fabricate photosensitive polysilsesquioxane passivation layers as effective passivation material.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
