Abstract
In this paper reliability performance of two all-in-one etch methods, self-aligned via (SAV) and punch-through (PT), has been investigated in detail. The breakdown voltage (Vbd) has been dramatically improved with the SAV etch method. However, electromigration (EM) performance has showed ~50% degradation. On the other hand, no degradation was found in stress migration (SM) performance. The underlying mechanisms for the reliability difference are detailed.
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