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Abstract
Bias temperature instability (BTI) is one of the critical device degradation mechanisms in poly-Si/SiON and metal gate/high-k complementary metal-oxide-semiconductor (CMOS) technologies. Using the pre- and post-BTI flicker noise measurements, we investigated the bulk trap density, Nt, in both of these technologies. The low-frequency noise spectra were predominantly of 1/fγ type with γ<1 for NMOS and ∼1 for PMOS. For SiON based technologies, the lower VTH degradation due to PBTI was noticed while considerable VTH degradation was observed for NBTI in both SiON and MGHK technologies. Both MGHK and SiON pFETs show a clear increase in the effective volume trap density, Nt, after NBTI. The increase in Nt in MGHK n-MOSFETs during PBTI is markedly higher than that in MGHK p-MOSFETs during NBTI.
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