Reliability Characterization of a Low-k Dielectric Using Magnetoresistance as a Diagnostic Tool

Abstract

Device reliability predictions of the low-k amorphous dielectric material SiCOH using its negative magnetoresistance (MR) is demonstrated herein. The magnitude of the MR is related to the density of defects at the interface and within the bulk of the dielectric material. Moreover, the mean-free path of carriers in the bulk dielectric material within the conduction band is increased in the presence of an applied external magnetic field due to the electron spin-polarization relaxation time modification cooperative effect resulting in suppression of the formation of singlet states and trap-mediated spin-singlet state pair hopping due to carrier spin constraints supporting triplet states with a concomitant rise in current in the conduction band. Interelectrode charge carrier conduction due to trap states within the bulk of the material leading to dielectric breakdown is a major detractor in insulators. A direct correlation is shown between the MR in the amorphous dielectric material SiCOH (a-SiCOH) and failure rates of the insulator in time-dependent dielectric breakdown (TDDB) material lifetimes.