Abstract
La-incorporated HfO 2 could improve the thermal stability and interface trap quality. Laminated structures with different doping positions and thicknesses were fabricated by RF magnetron co-sputtering method. The physical and electrical properties of HfO 2/HfLaO/p-Si and HfLaO/HfO 2/p-Si structures after 850 °C postannealing were analyzed. And the time dependent dielectric breakdown (TDDB) characteristics were also analyzed for metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited (ALD) HfLaO gate dielectrics. For TDDB characteristics, the Weibull slopes were independent of stress voltages and capacitor areas, but they were dependent on the stress temperatures. The electric-field acceleration parameter ( γ) is about 4.3–4.5 MV/cm. The maximum voltage ( V g) for 10-year TDDB lifetime under 85 °C operation is V g = 2.03 V, or equivalently 6.1 MV/cm.
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