Reliability based design optimization applied to the high electron mobility transistor (HEMT)

Abstract

Among the most important components in complex and high-power mechatronic systems is the transistor. The High Electron Mobility Transistor (HEMT) is a technology under development. This paper presents the hybrid Reliability Based Design Optimization (RBDO) method applied to the HEMT technology in order to improve its performance and reliability. The execution of RBDO processes requires the development and coupling of two models: the finite element model using Comsol multiphysics® software and the RBDO model by Matlab® software. The first model is used to simulate the electro-thermomechanical behavior of components. The second model is used to solve the optimization problem by coupling with the first model. After the application of this process, it was possible to determine the optimal values of the design variables which allows optimizing the multiphysics behavior of the structure and the reliability level of the HEMT.