Abstract
Accurate circuit simulation reflecting physical and electrical stress is of importance in indium gallium zinc oxide (IGZO)-based flexible electronics. In particular, appropriate modeling of threshold voltage (VT) changes in different bias and bending conditions is required for reliability-aware simulation in both device and circuit levels. Here, we present SPICE compatible compact modeling of IGZO transistors and inverters having an atomic layer deposition (ALD) Al2O3 gate insulator on a polyethylene terephthalate (PET) substrate. Specifically, the modeling was performed to predict the behavior of the circuit using stretched exponential function (SEF) in a bending radius of 10 mm and operating voltages ranging between 4 and 8 V. The simulation results of the IGZO circuits matched well with the measured values in various operating conditions. It is expected that the proposed method can be applied to process improvement or circuit design by predicting the direct current (DC) and alternating current (AC) responses of flexible IGZO circuits.
Highlights
indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) can be fabricated on a flexible substrate, such as polyethylene terephthalate (PET) and polyimide (PI), through a low-temperature process, and they have been applied to rollable and foldable electronics [6,7,8]
The studies were performed at the transistor level, which has a limitation in circuit-level this paper, we analyzed the performance of IGZO TFTs and inverters based on the alternating current (AC) In simulation
The electrical stress and recovery on the driver and on a flexible PET substrate consisting of a low-temperature processed amorphous indium gallium zinc oxide (a-IGZO) and an load transistor of the inverters were analyzed under bias conditions
Summary
Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations. A positive gate bias stress (+VG) on IGZO TFTs results in a positive shift of of 10 threshold voltage (Vt) This is due to electron-trapping inside the gate insulator and on the interface trap. The studies were performed at the transistor level, which has a limitation in circuit-level this paper, we analyzed the performance of IGZO TFTs and inverters based on the AC In simulation. The electrical stress and recovery on the driver and on a flexible PET substrate consisting of a low-temperature processed a-IGZO and an load transistor of the inverters were analyzed under bias conditions. Flexible IGZO circuits, enabling a circuit operation prediction based on compact modeling
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