Abstract
Metal-insulator-metal (MIM) capacitors are deposited at low temperatures. The dielectrics used for MIM capacitors are amorphous and always contain a certain amount of extrinsic defects. In this paper, the reliability of extrinsic defects in SiNx MIM capacitors as part of a GaAs high voltage (HV) FET process was assessed. It was shown in this paper that the number of extrinsic defects depends on the presence of oval defects in the epitaxial GaAs layers. The reliability assessment was done using electric field breakdown (Ebd), time dependent dielectric breakdown (TDDB) measurements and visual inspection. It was also shown that this combination can lead to an estimate of the lifetime and screening of capacitors containing extrinsic defects
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
